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Scientific Publications of the State University of Novi Pazar Series A: Applied Mathematics, Informatics and mechanics
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Stability of semiconductor memory characteristics in a radiation environment
(naslov ne postoji na srpskom)
Džavni univerzitet u Novom Pazaru
Projekat:
Fizički i funkcionalni efekti interakcije zračenja sa elektrotehničkim i biološkim sistemima (MPNTR - 171007)

Ključne reči: semiconductor memory; radiation effects; simulation
Sažetak
(ne postoji na srpskom)
Radiation defects in electronic device can occur in a process of its fabrication or during use. Miniaturization trends in industry and increase in level of integration of electronic components have negative affect on component's behavior in a radiation environment. The aim of this paper is to analyze radiation effects in semiconductor memories and to establish how ionizing radiation influences characteristics and functionality of semiconductor memories. Both the experimental procedure and simulation have been used to investigate the behavior of irradiated semiconductor memories. EPROM and EEPROM commercial semiconductor memory samples have been exposed to indirect ionizing radiation to test their radiation hardness. Monte Carlo simulation method has been used to analyze the effect of direct ionizing radiation on semiconductor memory.
Reference
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Dolićanin, Ć.B., StankoviĆ, K.Đ., Dolićanin, D.Ć., Lončar, B.B. (2011) Statistička obrada rezultata nuklearnog brojanja. Nuclear Technology and Radiation Protection, vol. 26, br. 2, str. 164-170
Holmes-Siedle, A., Adams, L. (2002) Handbook of radiation effects. New York: Oxford University Press
Messenger, G.C., Ash, M.S. (1992) The effects of radiation on electronic systems. New York: Van Nostrand Reinhold
Nikolić, D., Vasić, A., Fetahović, I., Stanković, K., Osmokrović, P. (2011) Photodiode behavior in radiation environment. Scientific Publications of the State University of Novi Pazar Series A: Applied Mathematics, Informatics and mechanics, vol. 3, br. 1, str. 27-34
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Stanković, S.J., Iričanin, B.D., Nikolić, D., Janković, K.S., Radenković, M., Stanković, K.Đ., Osmokrović, P.V. (2012) MSV signal processing system for neutron-gamma discrimination in a mixed field. Nuclear Technology and Radiation Protection, vol. 27, br. 2, str. 165-170
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Vujisic, M.Lj., Stankovic, K.D., Marjanovic, N.S., Osmokrovic, P.V. (2010) Simulated Effects of Proton and Ion Beam Irradiation on Titanium Dioxide Memristors. IEEE Transaction on Nuclear Science, vol. 57, br. 4, str. 1798-1804
Vujisić, M., Marjanović, N., Fetahović, I., Stanković, K., Osmokrović, P. (2012) Influence of radiation on titanium dioxide memristors. Scientific Publications of the State University of Novi Pazar Series A: Applied Mathematics, Informatics and mechanics, vol. 4, br. 1, str. 75-82
Warner, J.H., i dr. (2005) Displacement damage correlation of proton and silicon ion radiation in GaAs. IEEE Trans. Nucl. Sci, 52, 6, str. 2678-2682
Zdravković, M.R., Vasić, A.I., Radosavljević, R.Lj., Vujisić, M.Lj., Osmokrović, P.V. (2011) Uticaj zračenja na osobine solarnih ćelija. Nuclear Technology and Radiation Protection, vol. 26, br. 2, str. 158-163
Ziegler, J.F., Biersack, J.P., Ziegler, M.D. SRIM: The stopping and range of ions in matter. http://www.srim.org
 

O članku

jezik rada: engleski
vrsta rada: neklasifikovan
DOI: 10.5937/SPSUNP1501033F
objavljen u SCIndeksu: 13.03.2016.

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