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Journal of Applied Engineering Science
2020, vol. 18, br. 4, str. 515-519
Modeling of NBTI degradation in p-channel VDMOSFETs
(naslov ne postoji na srpskom)
Mitrović Nikolaa, Danković Danijela, Prijić Zorana, Stojadinović Ninoslavb
aUniverzitet u Nišu, Elektronski fakultet, Katedra za mikroelektroniku
bSrpska akademija nauke i umetnosti (SANU), Beograd

e-adresa: nikola.i.mitrovic@elfak.ni.ac.rs
Projekat:
Karakterizacija, analiza i modelovanje fizičkih pojava u tankim slojevima za primenu u MOS nanokomponentama (MPNTR - 171026)
Razvoj, optimizacija i primena tehnologija samonapajajućih senzora (MPNTR - 32026)
Work has also been supported by Serbian Academy of Sciences and Arts (SASA) under grant: Effects of combined stressing in modern microelectronical circuits (multistress), (grant no. F-148.)

Ključne reči: reliability; VDMOS power transistors; threshold voltage; modeling
Sažetak
(ne postoji na srpskom)
This paper gives insight in reliability of p-channel VDMOSFET power transistors subjected to NBT stressing. Effects that lead to degradation of characteristics of these electronic circuits are presented, out of which threshold voltage shift with NBT stressing is further analysed. Measurements have been done and experimental results of the threshold voltage degradation of power transistors IRF9520 caused by different types of negative bias temperature stressing are shown. Stressing types, both static and pulsed, and their impact on transistors, especially on threshold voltage shifts have been explained in more details. An elementary equivalent electrical circuit is designed and proposed with the goal to model impact of both types of stressing, and also to calculate and estimate reliability of the circuit under specified stress. All of the elements of the modeling circuit and their dependencies are explained. Example of modeling from the experimental data is given together with the comparison between measured and modeled results. Differences between obtained results are discussed.
Reference

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Danković, D., Manić, I., Đorić-Veljković, S., Davidović, V., Golubović, S., Stojadinović, N. (2006) NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs. Microelectronics Reliability, 46(9-11): 1828-1833

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Davidović, V., Danković, D., Ilić, A., Manić, I., Golubović, S., Đorić-Veljković, S., Prijić, Z., Stojadinović, N. (2016) NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors. IEEE Transactions on Nuclear Science, 63(2): 1268-1275

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O članku

jezik rada: engleski
vrsta rada: izvorni naučni članak
DOI: 10.5937/jaes0-26760
primljen: 26.05.2020.
prihvaćen: 02.09.2020.
objavljen u SCIndeksu: 25.12.2020.
metod recenzije: dvostruko anoniman
Creative Commons License 4.0

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