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Scientific Publications of the State University of Novi Pazar Series A: Applied Mathematics, Informatics and mechanics
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A design of an ultra low-power operational transconductance amplifier
(naslov ne postoji na srpskom)
aUniverzitet u Nišu, Elektronski fakultet
bTelekom Srbija a.d., Beograd
Ključne reči: Subthreshold; weak inversion; operational transconductance amplifier; low-power
Sažetak
(ne postoji na srpskom)
This paper describes a design of an ultra low-power, low-voltage operational transconductance amplifier (OTA). A two stage OTA is implemented in 0.13 μ m SiGe BiCMOS technology. The OTA operates with all transistors active in subthreshold region. Under the typical operating conditions, circuit supply voltage is 0.5 V, supply current 150 nA and power consumption is 75 nW. Low-frequency gain is 53 dB, gain-bandwidth product (GBW) 350 kHz and phase margin 55°. -1 dB gain compression point is -7.4 dBm and output intercept point (OIP3) -21.5 dBm. OTA layout active chip area is 0.0014 mm2.
Reference
Abdelfattah, O., Roberts, G.W., Shih, I., Shih, Y. (2015) An Ultra-Low-Voltage CMOS Process-Insensitive Self-Biased OTA with Rail-to-Rail Input Range. IEEE Transactions on Circuits and Systems I: Regular Papers, 62(10): 2380-2390
Borhani, M., Razaghian, F. (2010) Low Power Op-Amp Based on Weak Inversion with Miller-Cascoded Frequency Compensation. u: International Multi Conference of Engineers and Computer Scientists 2010, Hong Kong, Vol II: 1413-1417
Comer, D.J., Comer, D.T. (2004) Using the Weak Inversion Region to Optimize Input Stage Design of CMOS Op Amps. IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, 51(1): 8-14
Enz, C.C., Krummenacher, F., Vittoz, E.A. (1995) An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications. Analog Integrated Circuits and Signal Processing, 8(1): 83-114
IHP-Microelectronics SiGe:C BiCMOS Technologies for MPW & Prototyping. http://www.ihp-microelectronics.com/en/services/mpw-prototyping/sigec-bicmostechnologies.html, available at April, 2019
Magnelli, L., Amoroso, F.A., Crupi, F., Cappuccino, G., Iannaccone, G. (2014) Design of a 75-nW, 0.5-V subthreshold complementary metal-oxide-semiconductor operational amplifier. International Journal of Circuit Theory and Applications, 42(9): 967-977
o'Halloran M., Sarpeshkar, R. (2004) A 10-nW 12-bit accurate analog storage cell with 10-aA leakage. IEEE Journal of Solid-State Circuits, 39(11): 1985-1996
Tajalli, A., Leblebici, Y. (2010) Extreme Low-Power Mixed Signal IC Design: Subthreshold Source-Coupled Circuits. New York: Springer
Vittoz, E., Fellrath, J. (1977) CMOS analog integrated circuits based on weak inversion operations. IEEE Journal of Solid-State Circuits, 12(3): 224-231
Wang, A., Calhoun, B.H., Chandrakasan, A.P. (2006) Sub-threshold Design for Ultra Low-Power Systems. New York: Springer
 

O članku

jezik rada: engleski
vrsta rada: neklasifikovan
DOI: 10.5937/SPSUNP1901033J
objavljen u SCIndeksu: 16.07.2019.

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